Methods of forming semiconductor device with self-aligned contact elements and the resulting devices

ABSTRACT

One method discloses performing an etching process to form a contact opening in a layer of insulating material above at least a portion of a source/drain, region wherein, after the completion of the etching process, a portion of a gate structure of the transistor is exposed, selectively forming an oxidizable material on the exposed gate structure, converting at least a portion of the oxidizable material to an oxide material, and forming a conductive contact in the contact opening that is conductively coupled to the source/drain region. A novel transistor device disclosed herein includes an oxide material positioned between a conductive contact and a gate structure of the transistor, wherein the oxide material contacts the conductive contact and contacts a portion, but not all, of the exterior surface of the gate structure.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure generally relates to the fabrication ofintegrated circuits, and, more particularly, to various methods offorming self-aligned contacts for a semiconductor device, and theresulting semiconductor devices.

2. Description of the Related Art

In modern integrated circuits, such as microprocessors, storage devicesand the like, a very large number of circuit elements, especiallytransistors, are provided and operated on a restricted chip area.Immense progress has been made over recent decades with respect toincreased performance and reduced feature sizes of circuit elements,such as transistors. However, the ongoing demand for enhancedfunctionality of electronic devices forces semiconductor manufacturersto steadily reduce the dimensions of the circuit elements and toincrease the operating speed of the circuit elements. The continuingscaling of feature sizes, however, involves great efforts in redesigningprocess techniques and developing new process strategies and tools so asto comply with new design rules. Generally, in complex circuitryincluding complex logic portions, MOS technology is presently apreferred manufacturing technique in view of device performance and/orpower consumption and/or cost efficiency. In integrated circuitsincluding logic portions fabricated by MOS technology, field effecttransistors (FETs) are provided that are typically operated in aswitched mode, that is, these devices exhibit a highly conductive state(on-state) and a high impedance state (off-state). The state of thefield effect transistor is controlled by a gate electrode, whichcontrols, upon application of an appropriate control voltage, theconductivity of a channel region formed between a drain region and asource region.

To improve the operating speed of FETs, and to increase the density ofFETs on an integrated circuit device, device designers have greatlyreduced the physical size of FETs over the years. More specifically, thechannel length of FETs has been significantly decreased, which hasresulted in improving the switching speed of FETs. However, decreasingthe channel length of a FET also decreases the distance between thesource region and the drain region. In some cases, this decrease in theseparation between the source and the drain makes it difficult toefficiently inhibit the electrical potential of the source region andthe channel from being adversely affected by the electrical potential ofthe drain. This is sometimes referred to as a so-called short channeleffect, wherein the characteristic of the FET as an active switch isdegraded.

In contrast to a FET, which has a planar structure, a so-called FinFETdevice has a three-dimensional (3D) structure. More specifically, in aFinFET, a generally vertically positioned fin-shaped active area isformed and a gate electrode encloses both sides and an upper surface ofthe fin-shaped active area to form a tri-gate structure so as to use achannel having a three-dimensional structure instead of a planarstructure. In some cases, an insulating cap layer, e.g., siliconnitride, is positioned at the top of the fin and the FinFET device onlyhas a dual-gate structure. Unlike a planar FET, in a FinFET device, achannel is formed perpendicular to a surface of the semiconductingsubstrate so as to reduce the physical size of the semiconductor device.Also, in a FinFET, the junction capacitance at the drain region of thedevice is greatly reduced, which tends to reduce at least some shortchannel effects. When an appropriate voltage is applied to the gateelectrode of a FinFET device, the surfaces (and the inner portion nearthe surface) of the fins, i.e., the substantially vertically orientedsidewalls and the top upper surface of the fin with inversion carriers,contributes to current conduction. In a FinFET device, the“channel-width” is approximately two times (2×) the vertical fin-heightplus the width of the top surface of the fin, i.e., the fin width.Multiple fins can be formed in the same foot-print as that of a planartransistor device. Accordingly, for a given plot space (or foot-print),FinFETs tend to be able to generate significantly stronger drivecurrents than planar transistor devices. Additionally, the leakagecurrent of FinFET devices after the device is turned “OFF” issignificantly reduced as compared to the leakage current of planar FETsdue to the superior gate electrostatic control of the “fin” channel onFinFET devices. In short, the 3D structure of a FinFET device is asuperior MOSFET structure as compared to that of a planar FET,especially in the 20 nm CMOS technology node and beyond.

By using such field effect transistors, more complex circuit componentsmay be composed, such as inverters and the like, thereby forming complexlogic circuitry, embedded memories and the like. Over the recent years,due to the reduced dimensions of the transistor devices, the operatingspeed of the circuit components has been increased with every new devicegeneration and the “packing density” in such products has been increasedover the recent years. Such improvements in the performance oftransistor devices has reached the point where the limiting factor ofthe finally achieved operating speed of complex integrated circuitproducts is no longer the individual transistor element but theelectrical performance of the complex wiring system that is formed abovethe device level including the actual semiconductor-based circuitelements. Typically, due to the large number of circuit elements and therequired complex layout of modern integrated circuits, the electricalconnections of the individual circuit elements cannot be establishedwithin the same device level on which the circuit elements aremanufactured, but require one or more additional metallization layers,which generally include metal-containing lines providing the intra-levelelectrical connection, and also include a plurality of inter-levelconnections or vertical connections, which are also referred to as vias.These vertical interconnect structures comprise an appropriate metal andprovide the electrical connection of the various stacked metallizationlayers.

Furthermore, in order to actually connect the circuit elements formed inthe semiconductor material with the metallization layers, an appropriatevertical contact structure is provided, a first end of which isconnected to a respective contact region of a circuit element, such as agate electrode and/or the drain and source regions of transistors, and asecond end that is connected to a respective metal line in themetallization layer. In some applications, the second end of the contactstructure may be connected to a contact region of a furthersemiconductor-based circuit element, in which case the interconnectstructure in the contact level is also referred to as a localinterconnect. The contact structure may comprise contact elements orcontact plugs having a generally square-like or round shape that areformed in an interlayer dielectric material, which in turn encloses andpassivates the circuit elements. As the critical dimensions of thecircuit elements in the device level decreased, the dimensions of metallines, vias and contact elements were also reduced. In some cases, theincreased packing density mandated the use of sophisticatedmetal-containing materials and dielectric materials in order to reducethe parasitic capacitance in the metallization layers and provide asufficiently high conductivity of the individual metal lines and vias.For example, in complex metallization systems, copper in combinationwith low-k dielectric materials, which are to be understood asdielectric materials having a dielectric constant of approximately 3.0or less, are typically used in order to achieve the required electricalperformance and the electromigration behavior as is required in view ofreliability of the integrated circuits. Consequently, in lower-lyingmetallization levels, metal lines and vias having critical dimensions ofapproximately 100 nm and significantly less may have to be provided inorder to achieve the required packing density in accordance with densityof circuit elements in the device level.

As device dimensions have decreased, e.g., transistors with gate lengthsof 50 nm and less, the contact elements in the contact level have to beprovided with critical dimensions in the same order of magnitude. Thecontact elements typically represent plugs, which are formed of anappropriate metal or metal composition, wherein, in sophisticatedsemiconductor devices, tungsten, in combination with appropriate barriermaterials, has proven to be a viable contact metal. When formingtungsten-based contact elements, typically the interlayer dielectricmaterial is formed first and is patterned so as to receive contactopenings, which extend through the interlayer dielectric material to thecorresponding contact areas of the circuit elements. In particular, indensely packed device regions, the lateral size of the drain and sourceareas and thus the available area for the contact regions is 100 nm andsignificantly less, thereby requiring extremely complex lithography andetch techniques in order to form the contact openings with well-definedlateral dimensions and with a high degree of alignment accuracy.

For this reason, contact technologies have been developed in whichcontact openings are formed in a self-aligned manner by removingdielectric material, such as silicon dioxide, selectively from thespaces between closely spaced gate electrode structures. That is, aftercompleting the transistor structure, the gate electrode structures areused as etch masks for selectively removing the silicon dioxide materialin order to expose the contact regions of the transistors, therebyproviding self-aligned trenches which are substantially laterallydelineated by the spacer structures of the gate electrode structures.Consequently, a corresponding lithography process only needs to define aglobal contact opening above an active region, wherein the contacttrenches then result from the selective etch process using the gateelectrode structures, i.e., the portions exposed by the global contactopening, as an etch mask. Thereafter, an appropriate contact material,such as tungsten and the like, may be filled into the contact trenches.

However, the aforementioned process of forming self-aligned contactsresults in an undesirable loss of the materials that protect theconductive gate electrode, i.e., the gate cap layer and the sidewallspacers, as will be explained with reference to FIGS. 1A-1B. FIG. 1Aschematically illustrates a cross-sectional view of an integratedcircuit product 10 at an advanced manufacturing stage. As illustrated,the product 10 comprises a plurality of illustrative gate structures 11that are formed above a substrate 12, such as a silicon substrate. Thegate structures 11 are comprised of an illustrative gate insulationlayer 13 and an illustrative gate electrode 14. An illustrative gate caplayer 16 and sidewall spacers 18 encapsulate and protect the gatestructures 11. The gate cap layer 16 and sidewall spacers 18 aretypically made of silicon nitride. Also depicted in FIG. 1A are aplurality of raised source/drain regions 20 and a layer of insulatingmaterial 22, e.g., silicon dioxide. FIG. 1B depicts the product 10 afteran opening 24 has been formed in the layer of insulating material 22 fora self-aligned contact. Although the contact etch process performed toform the opening 24 is primarily directed at removing the desiredportions of the layer of insulating material 22, portions of theprotective gate cap layer 16 and the protective sidewall spacers 18 getconsumed during the contact etch process, as simplistically depicted inthe dashed regions 26. Given that the cap layer 16 and the spacers 18are attacked in the contact etch process, the thickness of theseprotective materials must be sufficient such that, even after thecontact etch process is completed, there remains sufficient material toprotect the gate structures 11. Accordingly, device manufacturers tendto make the cap layers 16 and spacers 18 having an additional thicknessthat may otherwise not be required but for the consumption of the caplayers 16 and the spacers 18 during the contact etch process. In turn,increasing the thickness of such structures, i.e., increasing thethickness of the gate cap layers 16, causes other problems, such asincreasing the aspect ratio of the contact opening 24 due to theincreased height, increasing the initial gate height, which makes thegate etching and spacer etching processes more difficult, etc.

The present disclosure is directed to various methods of formingself-aligned contacts for a semiconductor device, and the resultingsemiconductor devices, that may avoid, or at least reduce, the effectsof one or more of the problems identified above.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

Generally, the present disclosure is directed to various methods offorming self-aligned contacts for a semiconductor device, and theresulting semiconductor devices. One method disclosed includes formingat least one layer of insulating material above a source/drain region ofa transistor, performing at least one etching process to form a contactopening in the layer of insulating material above at least a portion ofthe source/drain region, wherein, after the completion of the etchingprocess, a portion of a gate structure of the transistor is exposed,selectively forming an oxidizable material on at least a portion of theexposed gate structure, performing an oxidation process to convert atleast a portion of the oxidizable material to an oxide material, andforming a conductive contact in the contact opening that is conductivelycoupled to the source/drain region.

A further illustrative method disclosed herein includes forming a gatestructure of a transistor above a substrate, wherein the gate structurehas an initial height, performing a first etching process to reduce theinitial height of the gate structure and thereby define a reduced heightgate structure, forming a gate cap layer above the reduced height gatestructure, and forming at least one layer of insulating material above asource/drain region of the transistor. In this example, the method alsoincludes the steps of performing at least one second etching process toform a contact opening in the layer of insulating material above atleast a portion of the source/drain region, wherein, after thecompletion of the second etching process, a portion of the gate caplayer and a portion of an upper surface and a portion of a side surfaceof the gate structure are exposed, selectively forming an oxidizablematerial on the exposed upper surface and the exposed side surface ofthe exposed gate structure, performing an oxidation process to convertat least a portion of the oxidizable material to an oxide material, andforming a conductive contact in the contact opening that is conductivelycoupled to the source/drain region.

Yet another illustrative method disclosed herein includes forming a gatestructure of a transistor above a substrate, wherein the gate structurehas an initial height and an upper surface, forming at least one layerof insulating material above the source/drain region and on the uppersurface of the gate structure, and performing at least one etchingprocess to form a contact opening in the layer of insulating materialabove at least a portion of the source/drain region, wherein, after thecompletion of the etching process, a portion of an upper surface and aportion of a side surface of the gate structure are exposed. In thisexample, the method further includes selectively forming an oxidizablematerial on the exposed upper surface and the exposed side surface ofthe exposed gate structure, performing an oxidation process to convertat least a portion of the oxidizable material to an oxide material, andforming a conductive contact in the contact opening that is conductivelycoupled to the source/drain region.

One illustrative example of a novel transistor device disclosed hereincomprises a gate structure positioned above a semiconductor substrate,wherein the gate structure has an exterior surface, and a layer ofinsulating material is positioned above the substrate and the gatestructure. The device also includes a conductive contact positioned inan opening formed in at least the layer of insulating material, whereinthe conductive contact is conductively coupled to a source/drain regionof the transistor. In this embodiment, the novel device includes anoxide material positioned between the conductive contact and the gatestructure, wherein the oxide material contacts the conductive contactand contacts a portion, but not all, of the exterior surface of the gatestructure. In more detailed examples, the oxide material contacts aportion, but not all, of the upper surface of the gate structure andcontacts a portion, but not all, of the side surface of the gatestructure.

Yet another novel transistor device disclosed herein comprises a gatestructure positioned above a semiconductor substrate, wherein the gatestructure has a gate recess that extends laterally, in a gate lengthdirection, only partially across the upper surface of the gatestructure, and a layer of insulating material that is positioned abovethe substrate and the gate structure. The device also includes aconductive contact positioned in an opening formed in at least the layerof insulating material, wherein the conductive contact is conductivelycoupled to a source/drain region of the transistor. Lastly, the noveldevice includes an oxide material positioned in at least the gate recessand between the conductive contact and the gate structure, wherein theoxide material contacts the conductive contact and contacts a portion,but not all, of the gate structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1A-1B schematically illustrate a cross-sectional view of anillustrative prior art integrated circuit product that employsself-aligned contacts;

FIGS. 2A-2I depict one illustrative method disclosed herein for formingself-aligned contacts for a semiconductor device, and the resultingsemiconductor device;

FIGS. 3A-3G depict another illustrative method disclosed herein forforming self-aligned contacts for a semiconductor device, and theresulting semiconductor device; and

FIGS. 4A-4G depict yet another illustrative method disclosed herein forforming self-aligned contacts for a semiconductor device, and theresulting semiconductor device.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

The present disclosure generally relates to various methods of formingself-aligned contacts for a semiconductor device, and the resultingsemiconductor devices. Moreover, as will be readily apparent to thoseskilled in the art upon a complete reading of the present application,the present method is applicable to a variety of devices, including, butnot limited to, logic devices, memory devices, etc., and the methodsdisclosed herein may be employed to form N-type or P-type semiconductordevices. The methods and devices disclosed herein may be employed inmanufacturing products using a variety of technologies, e.g., NMOS,PMOS, CMOS, etc., and they may be employed in manufacturing a variety ofdifferent devices, e.g., memory devices, logic devices, ASICs, etc. Withreference to the attached figures, various illustrative embodiments ofthe methods and devices disclosed herein will now be described in moredetail.

FIG. 2A schematically illustrates a cross-sectional view of anintegrated circuit product 100 at an advanced stage of manufacturing. Asillustrated, the product 100 comprises a plurality of illustrative gatestructures 111 that are formed above a substrate 112. The substrate 112may have a variety of configurations, such as the depicted bulksubstrate configuration. The substrate 112 may have an SOI(silicon-on-insulator) configuration wherein the semiconductor devicesare formed in the active layer of the SOI substrate. The substrate 112may be made of silicon or it may be made of materials other thansilicon. Thus, the terms “substrate,” “semiconductor substrate” or“semiconducting substrate” should be understood to cover allsemiconducting materials and all forms of such materials. The inventionsdisclosed herein will be disclosed in the context of forming planartransistor devices. However, as will be recognized by those skilled inthe art after a complete reading of the present application, theinventions disclosed herein may be applied to the formation of planarFET devices as well as 3D devices, such as FinFET devices. Moreover, themethods disclosed herein are applicable to forming any type of device,e.g., an NFET device, a PFET device, etc.

With continuing reference to FIG. 2A, the final gate structures 111 areintended to be representative in nature of any type of gate structurethat may be employed in manufacturing integrated circuit products usingso-called gate-first or gate-last (replacement-gate) manufacturingtechniques. In general, the gate structures 111 are comprised of one ormore gate insulation layers, such as, for example, silicon dioxide, aso-called high-k (k greater than 10) insulation material (where k is therelative dielectric constant), etc., and one or more conductive materiallayers that act as the gate electrode, e.g., titanium nitride, tantalumnitride, tungsten, aluminum, polysilicon, etc. In general, in anillustrative replacement-gate manufacturing technique, a so-called“dummy” or sacrificial gate structure (not shown) including a gate caplayer is initially formed above the substrate 112 and patterned.Thereafter, the sidewall spacers 118 (see FIG. 2A) are formed adjacentthe patterned dummy gate structure/cap layer. The dummy gate structureremains in place as many process operations are performed to form thedevice, e.g., the formation of raised, doped source/drain regions,performing an anneal process to repair damage to the substrate caused bythe ion implantation processes and to activate the implanted dopantmaterials. At some point in the process flow, the gate cap layer isremoved by performing a chemical mechanical polishing (CMP) processrelative to a layer of insulating material so as to expose the dummygate structure for further processing. Thereafter, one or more etchingprocesses are performed to remove the dummy gate structure which resultsin the formation of a gate cavity 114 (see FIG. 2A) that is laterallydefined by the spacers 118 where the gate structure 111 for the deviceis formed. For example, after the dummy gate is removed, a conformalchemical vapor deposition (CVD) or atomic layer deposition (ALD) processmay be performed to conformably deposit a gate insulation layercomprised of a high-k layer of insulating material, e.g., hafnium oxide,in the gate cavity. Thereafter, one or more metal or metal alloy layersand/or polysilicon layers (that will become the gate electrode) may bedeposited in the gate cavity 114 above the gate insulation layer. A CMPprocess is then performed to remove excess portions of the depositedlayers of material positioned outside the gate cavity 114. Theseoperations result in the schematically depicted gate structures 111.

While still referencing FIG. 2A, the illustrative sidewall spacers 118that were formed adjacent the dummy gate structure (not shown), e.g.,silicon nitride spacers, encapsulate and protect portions of the gatestructure 111. The spacers 118 were formed by depositing a layer ofspacer material adjacent the dummy gate structure and thereafterperforming an anisotropic etching process on the layer of spacermaterial. Also depicted in FIG. 2A are a plurality of raisedsource/drain regions 120, an etch stop layer 113, e.g., silicon nitride,and a layer of insulating material 122, e.g., silicon dioxide. Theraised source/drain regions 120 are provided by way of example, as theinventions disclosed herein may be employed with devices having any typeof source/drain regions, e.g., raised or planar. The raised source/drainregions 120 may be formed by performing a variety of known processoperations. The etch stop layer 113 may be formed by performing aconformal deposition process, e.g., CVD, ALD, and its thickness may varydepending upon the particular application. FIG. 2A depicts the device100 after several process operations have been performed, i.e., gate capremoval, dummy gate removal to thereby define the gate cavities 114(between the spacers 118) where the gate structures 111 will be formed,formation of various layers of material that will make up the gatestructure 111 and after a CMP process was performed. Thus, in FIG. 2A,the upper surface of the gate structures 111 is exposed.

FIG. 2B depicts the product 100 after a timed, recess etching processhas been performed to selectively remove portions of the gate structures111 to thereby define a gate cap recess 111A, the depth of which mayvary depending upon the particular application. In one illustrativeembodiment, the gate cap recess 111A may have a depth on the order ofabout 5-20 nm relative to the upper surface of the layer of insulatingmaterial 122. In one illustrative embodiment, the etching processperformed to form the gate cap recesses 111A may be an anisotropicetching process.

FIG. 2C depicts the product 100 after a gate cap layer 124 has beenformed in each gate cap recess 111A. The gate cap layers 124 were formedby depositing a layer of gate cap material, e.g., silicon nitride, so asto overfill the gate cap recesses 111A, and thereafter performing a CMPprocess to remove the excess gate cap material using the layer ofinsulating material 122 as a polish-stop layer.

FIG. 2D depicts the product 100 after a layer of insulating material 126has been deposited across the product 100. The layer of insulatingmaterial 126 may be comprised of a variety of different materials, suchas silicon dioxide, a low-k (k value less than 3.3) material, etc., andit may be formed by performing a variety of techniques, e.g., CVD, etc.The thickness of the layer of insulating material 126 may vary dependingupon the particular application.

FIG. 2E depicts the product 100 after one or more etching processes wereperformed on the product 100 through a patterned etch mask (not shown),such as a patterned layer of photoresist material, to remove portions ofthe layer of insulating material 126 and substantially all of the layerof insulating material 122 to thereby define a plurality of self-alignedcontact openings 130. In the depicted example, the self-aligned contactopenings 130 are depicted as being precisely aligned relative to thegate structures 111. However, in a real-world device, the self-alignedcontact openings 130 may be somewhat misaligned relative to the gatestructures 111. During the formation of the self-aligned contactopenings 130, portions of the gate cap layer 124 and the sidewallspacers 118 are consumed, thereby exposing some of the surface 111S ofthe gate structures 111. In the example depicted in FIG. 2E, portions ofboth the upper surface and the side surfaces of the gate structures 111are exposed during this etching process. The amount of the side surfaceexposed depends upon the amount of consumption or “pull-back” of thespacers 118 during the etching process. Note that the etch stop layer113 remains in place at this point in the process flow to protect theraised source/drain regions 120 during the etching process(es).

FIG. 2F depicts the product 100 after an oxidizable material 132 isselectively grown on at least portions of the exposed surface orsurfaces 111S of the gate structures 111, i.e., the oxidizable material132 is selectively grown on the exposed metal or conductive materials inthe gate structures 111. The oxidizable material 132 may be comprised ofa variety of different materials, e.g., a metal, such as aluminum,silicon, etc., and its thickness may vary depending upon the particularapplication. In one illustrative embodiment, the oxidizable material 132may have a thickness of about 2-5 nm. The oxidizable material 132 may beformed using a variety of techniques. In one illustrative example, wherethe oxidizable material 132 is made of aluminum, it may be formed usingthe techniques generally described in the paper entitled SelectiveGrowth of Aluminum Using a Novel CVD System, T. Amazawa, H. Nakamura andY. Arita (1988), which is hereby incorporated by reference in itsentirety.

FIG. 2G depicts the product 100 after an oxidation process was performedto convert at least a portion of the oxidizable material 132 into anoxide material 132X, such as a metal oxide, aluminum oxide, silicondioxide, etc. The oxidation process may be any type of oxidationprocess, for example, a plasma oxidation process or a GCIB (Gas ClusterIon Beam) oxidation process, etc. In the depicted example, the oxidationprocess is performed for a sufficient duration such that substantiallythe entire thickness of the oxidizable material 132 is converted intooxide material 132X, as reflected by the different reference number andthe use of different cross-hatching. However, in other applications,only a surface portion of the thickness of oxidizable material 132 maybe converted into oxide material. In one illustrative embodiment, theoxidation process may be performed in a traditional furnace or in an RTAchamber in an oxidizing ambient. The temperature/duration of theoxidation process may vary depending upon the particular application andon how much of the oxidizable material 132 is desired to be converted toan oxide material 132X. In one illustrative embodiment, the oxidationprocess may be performed at a temperature that falls within the range ofabout 25-900° C. Note that the etch stop layer 113 remains in place atthis point in the process flow to protect the raised source/drainregions 120 during the oxidation process.

FIG. 2H depicts the device after a very brief “punch through” etchingprocess is performed to remove the remaining portions of the etch stoplayer 113 (as well as any other residual materials) so as to therebyexpose the source/drain regions 120.

FIG. 2I depicts the product 100 after conductive, self-aligned contactstructures 140 have been formed in the self-aligned contact openings 130such that they are conductively coupled to the source/drain regions 120.The self-aligned contact structures 140 are intended to be schematic andrepresentative in nature, as they may be formed using any of a varietyof different conductive materials and by performing traditionalmanufacturing operations. The self-aligned contact structures 140 mayalso contain one or more barrier layers (not depicted). In oneillustrative example, the self-aligned contact structures 140 may beformed by depositing a liner, e.g., a titanium nitride liner, followedby overfilling the self-aligned contact openings 130 with a conductivematerial, such as tungsten. Thereafter, a CMP process may be performedto planarize the upper surface of the layer of insulating material 126which results in the removal of excess portions of the liner and thetungsten positioned above the layer of insulating material 126 outsideof the self-aligned contact openings 130 and the formation of theself-aligned contact structures 140. If desired, a metal silicidematerial (not shown) may be formed on the source/drain regions prior toforming the self-aligned contact structures 140.

FIGS. 3A-3G depict another illustrative method disclosed herein forforming self-aligned contacts for a semiconductor device, and theresulting semiconductor device. FIG. 3A depicts the device 100 at apoint of fabrication that approximately corresponds to that of thedevice depicted in FIG. 2D, i.e., after the layer of insulating material126 has been formed on the device 100.

FIG. 3B depicts the product 100 after one or more etching processes wereperformed on the product 100 through a patterned etch mask (not shown),such as a patterned layer of photoresist material, to remove portions ofthe layer of insulating material 126 and substantially all of the layerof insulating material 122 to thereby define the self-aligned contactopenings 130. Note that the etch stop layer 113 remains in place at thispoint in the process flow to protect the raised source/drain regions 120during the etching process(es). During the formation of the self-alignedcontact openings 130 in FIG. 3B, portions of the gate cap layer 124 andthe sidewall spacers 118 are consumed, thereby exposing some of thesurface 111S of the gate structures 111. In the example depicted in FIG.3B, only portions of the upper surface of the gate structures 111 areexposed during this etching process.

FIG. 3C depicts the product 100 after a timed, recess etching processhas been performed to selectively remove the conductive portions of thegate structures 111 to thereby define a gate recess 111R, the depth ofwhich may vary depending upon the particular application. In oneillustrative embodiment, the gate recess 111R may have a depth on theorder of about 3-10 nm relative to the upper surface of the gatestructures 111. The width of the gate recesses 111R may vary dependingupon the lateral width of the upper surface of the gate structure 111that is exposed in forming the self-aligned contact openings 130. In oneillustrative embodiment, the etching process performed to form the gaterecesses 111R may be an anisotropic etching process.

FIG. 3D depicts the product 100 after the previously describedoxidizable material 132 has been selectively grown in the gate recesses111R, i.e., the oxidizable material 132 is selectively grown on theexposed metal or conductive materials in the gate recesses 111R.

FIG. 3E depicts the product 100 after the above-described oxidationprocess was performed to convert at least a portion of the oxidizablematerial 132 into an oxide material 132X.

FIG. 3F depicts the device after a very brief “punch through” etchingprocess is performed to remove the remaining portions of the etch stoplayer 113 (as well as any other residual materials) so as to therebyexpose the source/drain regions 120.

FIG. 3G depicts the product 100 after the above-described conductive,self-aligned contact structures 140 have been formed in the self-alignedcontact openings 130 such that they are conductively coupled to thesource/drain regions 120.

FIGS. 4A-4G depict yet another illustrative method disclosed herein forforming self-aligned contacts for a semiconductor device, and theresulting semiconductor device. FIG. 4A depicts the device 100 at apoint of fabrication that approximately corresponds to that of thedevice depicted in FIG. 2A, i.e., after the gate structures 111 havebeen exposed. In the embodiment shown in FIGS. 4A-4G, the gate structure111 is not recessed, nor is a gate cap layer 124 included, as was thecase in the previous embodiments

FIG. 4B depicts the device 100 after the layer of insulating material126 has been formed on the device 100.

FIG. 4C depicts the product 100 after one or more etching processes wereperformed on the product 100 through a patterned etch mask (not shown),such as a patterned layer of photoresist material, to remove portions ofthe layer of insulating material 126 and substantially all of the layerof insulating material 122 to thereby define the self-aligned contactopenings 130. In the example depicted in FIG. 4C, portions of both theupper surface and the side surfaces 111S of the gate structures 111 areexposed during this etching process. Note that the etch stop layer 113remains in place at this point in the process flow to protect the raisedsource/drain regions 120 during the etching process(es)

FIG. 4D depicts the product 100 after the previously describedoxidizable material 132 has been selectively grown on at least portionsof the exposed surface or surfaces 111S of the gate structures 111,i.e., the oxidizable material 132 is selectively grown on the exposedmetal or conductive materials in the gate structures 111.

FIG. 4E depicts the product 100 after the above-described oxidationprocess was performed to convert at least a portion of the oxidizablematerial 132 into an oxide material 132X. Note that the etch stop layer113 remains in place at this point in the process flow to protect theraised source/drain regions 120 during the oxidation process.

FIG. 4F depicts the device 100 after a very brief “punch through”etching process is performed to remove the remaining portions of theetch stop layer 113 (as well as any other residual materials) so as tothereby expose the source/drain regions 120.

FIG. 4G depicts the product 100 after the above-described conductive,self-aligned contact structures 140 have been formed in the self-alignedcontact openings 130 such that they are conductively coupled to thesource/drain regions 120.

In one illustrative example disclosed herein, a novel transistor devicedisclosed in FIGS. 2A-2I and 4A-4G comprises a gate structure 111positioned above a semiconductor substrate 112, wherein the gatestructure 111 has an exterior surface, and a layer of insulatingmaterial 126 is positioned above the substrate 112 and the gatestructure 111. The device also includes a conductive contact 140positioned in an opening 130 formed in at least the layer of insulatingmaterial 126, wherein the conductive contact 140 is conductively coupledto the source/drain region 120 of the transistor. Lastly, the noveldevice includes an oxide material 132X positioned between the conductivecontact 140 and the gate structure 111, wherein the oxide material 132Xcontacts the conductive contact 140 and contacts a portion, but not all,of the exterior surface of the gate structure 111. In more detailedexamples, the oxide material 132X contacts a portion, but not all, ofthe upper surface of the gate structure 111 and contacts a portion, butnot all, of the side surface of the gate structure 111. In the depictedexample, the oxide material 132X has a first portion that is positionedabove a portion, but not all, of the upper surface of the gate structure111 and a second portion that is positioned adjacent a portion, but notall, of the side surface of the gate structure 111. Additionally, insome cases, the first portion and the second portion of the oxidematerial 132X may be oriented at approximately ninety degrees relativeto one another.

In another illustrative example disclosed herein, a novel transistordevice disclosed in FIGS. 3A-3G comprises a gate structure 111positioned above a semiconductor substrate 112, wherein the gatestructure 111 has a gate recess 111R that extends laterally, in a gatelength direction, only partially across the upper surface of the gatestructure 111, and a layer of insulating material 126 that is positionedabove the substrate 112 and the gate structure 111. The device alsoincludes a conductive contact 140 positioned in an opening 130 formed inat least the layer of insulating material 126, wherein the conductivecontact 140 is conductively coupled to the source/drain region 120 ofthe transistor. Lastly, the novel device includes an oxide material 132Xpositioned in at least the gate recess 111R and between the conductivecontact 140 and the gate structure 111, wherein the oxide material 132Xcontacts the conductive contact 140 and contacts a portion, but not all,of the gate structure 111.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

What is claimed:
 1. A method of forming a transistor, said transistorhaving a gate structure comprised of a conductive material and asource/drain region, comprising: forming at least one layer ofinsulating material above said source/drain region; performing at leastone etching process to form a contact opening in said at least one layerof insulating material above at least a portion of said source/drainregion; wherein, after the completion of said etching process, a portionof said gate structure is exposed; selectively forming an oxidizablematerial on at least a portion of said exposed gate structure; afterselectively forming the oxidizable material, performing an oxidationprocess to convert at least a portion of said oxidizable material to anoxide material; and forming a conductive contact in at least saidcontact opening that is conductively coupled to said source/drainregion.
 2. The method of claim 1, wherein selectively forming saidoxidizable material comprises selectively forming one of a metal,aluminum or silicon.
 3. The method of claim 1, wherein performing saidoxidation process comprises performing said oxidation process at atemperature that falls within the range of about 25-900° C.
 4. Themethod of claim 1, wherein said etching process exposes both an uppersurface and a side surface of said gate structure.
 5. The method ofclaim 4, wherein said oxide material is positioned on said upper surfaceand said side surface of said gate structure.
 6. The method of claim 1,wherein said etching process exposes only an upper surface of said gatestructure.
 7. The method of claim 6, wherein said oxide material ispositioned only on said upper surface of said gate structure.
 8. Themethod of claim 1, wherein selectively forming said oxidizable materialon at least a portion of said exposed gate structure comprisesselectively forming said oxidizable material on at least any conductivematerials in said exposed gate structure.
 9. The method of claim 1,wherein said conductive contact is in contact with said oxide material.10. The method of claim 1, wherein performing said oxidation processconverts substantially all of said oxidizable material to said oxidematerial.
 11. A method of forming a transistor, said transistor having agate structure comprised of a conductive material and a source/drainregion, comprising: forming said gate structure above said substrate,said gate structure having an initial height; performing a first etchingprocess to reduce said initial height of said gate structure and therebydefine a reduced height gate structure; forming a gate cap layer abovesaid reduced height gate structure; forming at least one layer ofinsulating material above said source/drain region; performing at leastone second etching process to form a contact opening in said at leastone layer of insulating material above at least a portion of saidsource/drain region, wherein, after the completion of said at least onesecond etching process, a portion of said gate cap layer and a portionof an upper surface and a portion of a side surface of said gatestructure are exposed; selectively forming an oxidizable material onsaid exposed upper surface and said exposed side surface of said exposedgate structure; after selectively forming the oxidizable material,performing an oxidation process to convert at least a portion of saidoxidizable material to an oxide material; and forming a conductivecontact in at least said contact opening that is conductively coupled tosaid source/drain region.
 12. The method of claim 11, whereinselectively forming said oxidizable material comprises selectivelyforming one of a metal, aluminum or silicon.
 13. The method of claim 11,wherein performing said oxidation process comprises performing saidoxidation process at a temperature that falls within the range of about25-900° C.
 14. The method of claim 11, wherein said oxide material ispositioned on said exposed upper surface and said exposed side surfaceof said exposed gate structure.
 15. The method of claim 11, whereinselectively forming said oxidizable material on at least a portion ofsaid exposed gate structure comprises selectively forming saidoxidizable material on at least any conductive materials in said exposedgate structure.
 16. The method of claim 11, wherein said conductivecontact is in contact with said oxide material.
 17. The method of claim11, wherein performing said oxidation process converts substantially allof said oxidizable material to said oxide material.
 18. A method offorming a transistor, said transistor having a gate structure comprisedof a conductive material and a source/drain region, comprising: formingsaid gate structure above said substrate, said gate structure having aninitial height and an upper surface; forming at least one layer ofinsulating material above said source/drain region and on said uppersurface of said gate structure; performing at least one etching processto form a contact opening in said at least one layer of insulatingmaterial above at least a portion of said source/drain region, wherein,after the completion of said at least one etching process, a portion ofan upper surface and a portion of a side surface of said gate structureare exposed; selectively forming an oxidizable material on said exposedupper surface and said exposed side surface of said exposed gatestructure; after selectively forming the oxidizable material, performingan oxidation process to convert at least a portion of said oxidizablematerial to an oxide material; and forming a conductive contact in atleast said contact opening that is conductively coupled to saidsource/drain region.
 19. The method of claim 18, wherein selectivelyforming said oxidizable material comprises selectively forming one of ametal, aluminum or silicon.
 20. The method of claim 18, whereinperforming said oxidation process comprises performing said oxidationprocess at a temperature that falls within the range of about 25-900° C.21. The method of claim 18, wherein said oxide material is positioned onsaid exposed upper surface and said exposed side surface of said exposedgate structure.
 22. The method of claim 18, wherein selectively formingsaid oxidizable material on at least a portion of said exposed gatestructure comprises selectively forming said oxidizable material on atleast any conductive materials in said exposed gate structure.
 23. Themethod of claim 18, wherein said conductive contact is in contact withsaid oxide material.
 24. The method of claim 18, wherein performing saidoxidation process converts substantially all of said oxidizable materialto said oxide material.